![]() ![]() ![]() ![]() He also did some early work on electron behavior in high electric fields, which would eventually be thoroughly analyzed by the physicists Ralph H. His research focused on electric fields and electron emission through field induction, and his early work focused on the wonder device of the time: the x-ray tube. He received his PhD at the Friedrich-Wilhelms-Universität (now called Humboldt University) in Berlin on Februand then became an untenured professor at the physics institute there. Back then, it was part of the Austro-Hungarian Empire. Lilienfeld was born in 1882 in the city of Lviv, now located in the western part of Ukraine. Julius Edgar Lilienfeld was the first person to patent the idea for an FET. It took years of scientific research, engineering, analysis, and a fair bit of evangelism to transform the device that almost no one wanted into today’s backbone of the semiconductor and electronics industry. See the reference section of this article for links to those articles.) By contrast, development of the metal-oxide-semiconductor (MOS) field-effect transistor (FET) took decades, from its conception in the 1920s to an initial working device at the very end of the 1950s, to working commercial products in the 1960s. (I discussed this history in a 7-part series about the early transistor makers in EEJournal. A few of those vendors – including Infineon (formerly Siemens), NXP (formerly Philips), and Texas Instruments – continue to make semiconductors today. After the symposium, most of those companies started manufacturing bipolar point-contact transistors within mere months or a couple of years, and many became successful commercial semiconductor vendors. The first wave of semiconductor companies started in April 1952 when Bell Labs held its second transistor symposium for its transistor patent licensees, which was attended by representatives from some 40 companies. ![]()
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